The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Jun. 07, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Peter Ventzek, Austin, TX (US);

Alok Ranjan, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30621 (2013.01); H01L 21/02046 (2013.01); H01L 21/02538 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/3245 (2013.01); Y10S 148/056 (2013.01);
Abstract

A method for treating a substrate includes receiving the substrate in a vacuum process chamber. The substrate includes a III-V film layer disposed on the substrate. The III-V film layer includes an exposed surface, an interior portion underlying the exposed surface, and one or more of the following: Al, Ga, In, N, P, As, Sb, Si, or Ge. The method further includes altering the chemical composition of the exposed surface and a fraction of the interior portion of the III-V film layer to form an altered portion of the III-V film layer using a first plasma treatment, removing the altered portion of the III-V film layer using a second plasma treatment, and repeating the altering and removing of the III-V film layer until a predetermined amount of the III-V film layer is removed from the substrate.


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