The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2023

Filed:

Dec. 10, 2020
Applicant:

Fei Company, Hillsboro, OR (US);

Inventors:

James Vickers, San Jose, CA (US);

Seema Somani, San Jose, CA (US);

Cecelia Campochiaro, Sunnyvale, CA (US);

Yakov Bobrov, Burlingame, CA (US);

Assignee:

FEI Company, Hillsboro, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/302 (2006.01); H01J 37/304 (2006.01); H01J 37/305 (2006.01); G01N 23/2257 (2018.01); H01J 37/26 (2006.01); G01R 31/265 (2006.01); G01R 31/27 (2006.01); G01R 31/28 (2006.01); G01R 31/26 (2020.01); H01J 37/22 (2006.01); H01J 49/14 (2006.01);
U.S. Cl.
CPC ...
H01J 37/302 (2013.01); G01N 23/2257 (2013.01); G01R 31/26 (2013.01); G01R 31/265 (2013.01); G01R 31/27 (2013.01); G01R 31/28 (2013.01); H01J 37/266 (2013.01); H01J 37/304 (2013.01); H01J 37/305 (2013.01); H01J 37/3056 (2013.01); H01J 37/226 (2013.01); H01J 49/14 (2013.01); H01J 2237/30438 (2013.01); H01J 2237/30466 (2013.01); H01J 2237/31749 (2013.01);
Abstract

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.


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