The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 07, 2023

Filed:

May. 05, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Ching Wang, Kinmen, TW;

Kuan-Lun Cheng, Hsinchu, TW;

Wen-Hsing Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/76846 (2013.01); H01L 23/528 (2013.01); H01L 23/53209 (2013.01); H01L 29/0653 (2013.01); H01L 29/41791 (2013.01); H01L 29/4236 (2013.01); H01L 2924/13067 (2013.01);
Abstract

A semiconductor device structure, along with methods of forming such, are described. In one embodiment, a semiconductor device structure is provided. The semiconductor device structure a first source/drain region, a second source/drain region, and a gate stack disposed between the first source/drain region and the second source/drain region. The semiconductor device structure also includes a conductive feature disposed below the first source/drain region. The semiconductor device structure also includes a power rail disposed below and in contact with the conductive feature. semiconductor device structure also includes a dielectric layer enclosing the conductive feature, wherein an air gap is formed between the dielectric layer and the conductive feature.


Find Patent Forward Citations

Loading…