The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Feb. 25, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Sheng-Chun Yang, Tainan, TW;

Yi-Ming Lin, Tainan, TW;

Po-Wei Liang, Yilan County, TW;

Chu-Han Hsieh, Tainan, TW;

Chih-Lung Cheng, Miaoli County, TW;

Po-Chih Huang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01J 37/32 (2006.01); C23C 16/46 (2006.01); C23C 16/505 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32724 (2013.01); C23C 16/466 (2013.01); C23C 16/505 (2013.01); H01L 21/67109 (2013.01); H01J 2237/002 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3321 (2013.01); H01J 2237/3323 (2013.01); H01L 21/67028 (2013.01); H01L 21/67069 (2013.01);
Abstract

A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.


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