The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Oct. 11, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Yali Song, Wuhan, CN;

XiangNan Zhao, Wuhan, CN;

Ying Cui, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3418 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01);
Abstract

A memory includes a first deck including a first set of word lines, a second deck above the first deck and including a second set of word lines, and a controller. The controller is configured to apply a program voltage to a first target word line of the first set of word lines in the first deck, and apply a first pass voltage to at least one of the first set of word lines that is below the first target word line when applying the program voltage to the first target word line. The controller is also configured to apply the program voltage to a second target word line of the second set of word lines in the second deck, and apply a second pass voltage to at least one of the second set of word lines that is below the second target word line when applying the program voltage to the second target word line. The second pass voltage is greater than the first pass voltage.


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