The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Apr. 02, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Toshiyasu Fujimoto, Higashihiroshima, JP;

Hiromitsu Oshima, Higashihiroshima, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 27/108 (2006.01); H01L 29/06 (2006.01); G11C 11/402 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); G11C 11/4023 (2013.01); H01L 29/0649 (2013.01);
Abstract

An apparatus includes: a semiconductor substrate; an isolation region in the semiconductor substrate, the isolation region including an isolation trench filled with an insulating material therein; a plurality of island-shaped active regions in the semiconductor substrate surrounded by the isolation region; and a buried word-line having a bottom, the buried word-line at least passing across the isolation region between the plurality of active regions; wherein the isolation trench includes upper, middle and lower portions, each of the upper and lower portions has a substantially flat surface and the middle portion has a bulged surface.


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