The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Mar. 11, 2021
Micron Technology, Inc., Boise, ID (US);
Kishore Kumar Muchherla, Fremont, CA (US);
Mustafa N. Kaynak, San Diego, CA (US);
Sivagnanam Parthasarathy, Carlsbad, CA (US);
Xiangang Luo, Fremont, CA (US);
Peter Feeley, Boise, ID (US);
Devin M. Batutis, San Jose, CA (US);
Jiangang Wu, Milpitas, CA (US);
Sampath K Ratnam, Boise, ID (US);
Shane Nowell, Boise, ID (US);
Karl D. Schuh, Santa Cruz, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A voltage calibration scan is initiated. A first value of a data state metric measured for a sample block of a memory device based on associated with a first bin of blocks designated as a current is received. The first value is designated as a minimum value. A second value of the data state metric for the sample block is measured based on a set of read voltage offsets associated with a second bin of blocks having an index value higher than the current bin. In response to determining that the second value exceeds the first value, the first bin is maintained as the current bin and the voltage calibration scan is stopped.