The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

May. 14, 2020
Applicant:

Himax Technologies Limited, Tainan, TW;

Inventors:

Ya-Jing Yang, Tainan, TW;

Po Nan Chen, Tainan, TW;

Yu-Jui Hsieh, Tainan, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 27/146 (2006.01); G03F 1/70 (2012.01);
U.S. Cl.
CPC ...
H01L 27/14632 (2013.01); G03F 1/70 (2013.01); H01L 23/544 (2013.01); H01L 27/14627 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H01L 2223/54426 (2013.01);
Abstract

A process of overlay offset measurement includes providing a substrate; forming a first pattern layer with a predetermined first pattern on the substrate; forming a first photoresist layer on the substrate and the first pattern layer; forming a second photoresist layer on the first photoresist layer; forming a second pattern layer with a predetermined second pattern on the second photoresist layer; patterning the second photoresist layer to form a trench having a predetermined third pattern being substantially aligned with the predetermined first pattern of the first pattern layer; and performing overlay offset measurement according to the second pattern layer and the trench.


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