The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Dec. 26, 2019
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventor:

Meng-Wei Hsieh, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/522 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01Q 1/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/481 (2013.01); H01L 21/486 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/5226 (2013.01); H01L 2223/6677 (2013.01); H01Q 1/38 (2013.01);
Abstract

A semiconductor device package includes a first circuit layer and an emitting device. The first circuit layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device is disposed on the second surface of the first circuit layer. The emitting device has a first surface facing the second surface of the first circuit layer, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device has a conductive pattern disposed on the second surface of the emitting device. The lateral surface of the emitting device and the lateral surface of the first circuit layer are discontinuous.


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