The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Jan. 18, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Bhushan Zope, Phoenix, AZ (US);

Kiran Shrestha, Phoenix, AZ (US);

Shankar Swaminathan, Phoenix, AZ (US);

Chiyu Zhu, Helsinki, FI;

Henri Tuomas Antero Jussila, Espoo, FI;

Qi Xie, Wilsele, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/14 (2006.01); C23C 16/02 (2006.01); H01L 23/532 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76876 (2013.01); C23C 16/0272 (2013.01); C23C 16/045 (2013.01); C23C 16/14 (2013.01); C23C 16/45525 (2013.01); H01L 21/28568 (2013.01); H01L 21/76877 (2013.01); H01L 23/53266 (2013.01);
Abstract

Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.


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