The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

May. 24, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Chun Hsu, Taipei, TW;

Sheng-Wei Wu, Hsinchu, TW;

Shu-Yen Wang, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G01N 21/94 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67034 (2013.01); G01N 21/94 (2013.01); H01L 21/67253 (2013.01);
Abstract

A wafer drying method that detects molecular contaminants in a drying gas as a feedback parameter for a multiple wafer drying process is disclosed. For example, the method includes dispensing, in a wafer drying module, a drying gas over a batch of wafers. Further, the method includes collecting the drying gas from an exhaust of the wafer drying module and determining the concentration of contaminants in the drying gas. The method also includes re-dispensing the drying gas over the batch of wafers if the concentration of contaminants is greater than a baseline value and transferring the batch of wafers out of the wafer drying module if the concentration is equal to or less than the baseline value.


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