The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2023

Filed:

Dec. 26, 2019
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Jie Fang, San Jose, CA (US);

Yixiang Wang, Fremont, CA (US);

Qirong Zhang, Beijing, CN;

Haojie Zhang, Beijing, CN;

Jinmei Yang, Beijing, CN;

Fenghui Zhu, Beijing, CN;

Assignee:

ASML Netherlands, B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/26 (2006.01); C25F 3/14 (2006.01);
U.S. Cl.
CPC ...
H01J 37/265 (2013.01); C25F 3/14 (2013.01); H01J 2237/0455 (2013.01);
Abstract

A method of processing a workpiece may include forming a first layer on a first side of a base layer. The base layer may be part of a substrate including a plurality of layers. The method may also include forming a second layer on the first layer. A material of the second layer may include metal. The method may also include forming an opening in the second layer, forming an opening in the first layer by etching, and removing the second layer. The method may include dry etching of the first layer.


Find Patent Forward Citations

Fang, Jie. (2023). Systems and methods for etching a substrate (U.S. Patent No. 11581161). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11581161

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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