The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Sep. 28, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Han Wui Then, Portland, OR (US);
Stephan Leuschner, Munich, DE;
Marko Radosavljevic, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 21/285 (2006.01); H01L 21/765 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H03F 3/21 (2006.01); H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/28587 (2013.01); H01L 21/765 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H03F 3/21 (2013.01); H03F 3/45183 (2013.01); H03F 2200/451 (2013.01);
Abstract
Gallium nitride (GaN) transistors with source and drain field plates are described. In an example, a transistor includes a gallium nitride (GaN) layer above a substrate, a gate structure over the GaN layer, a source region on a first side of the gate structure, a drain region on a second side of the gate structure, the second side opposite the first side, a source field plate above the source region, and a drain field plate above the drain region.