The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2023
Filed:
Nov. 01, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chun-Chen Yeh, Danbury, CT (US);
Alexander Reznicek, Troy, NY (US);
Chen Zhang, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A vertical field effect transistor includes a first epitaxial region in contact with a top surface of a channel fin extending vertically from a bottom source/drain located above a substrate, a second epitaxial region above the first epitaxial region having a horizontal thickness that is larger than a horizontal thickness of the first epitaxial region. The first epitaxial region and the second epitaxial region form a top source/drain region of the semiconductor structure. The first epitaxial region has a first doping concentration and the second epitaxial region has a second doping concentration that is lower than the first doping concentration. A top spacer, adjacent to the first epitaxial region and the second epitaxial region, is in contact with a top surface of a high-k metal gate stack located around the channel fin and in contact with a top surface of a first dielectric layer disposed between adjacent channel fins.