The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2023

Filed:

Jun. 04, 2013
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Ottmar Geitner, Pentling, DE;

Wolfram Hable, Neumarkt, DE;

Andreas Grassmann, Regensburg, DE;

Frank Winter, Regensburg, DE;

Christian Neugirg, Regensburg, DE;

Ivan Nikitin, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H01L 23/373 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 23/433 (2006.01);
U.S. Cl.
CPC ...
H01L 24/89 (2013.01); H01L 23/3107 (2013.01); H01L 23/3735 (2013.01); H01L 23/49531 (2013.01); H01L 23/49575 (2013.01); H01L 24/83 (2013.01); H01L 24/97 (2013.01); H01L 25/50 (2013.01); H01L 23/4334 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/26135 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29005 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/30181 (2013.01); H01L 2224/83048 (2013.01); H01L 2224/83139 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83201 (2013.01); H01L 2224/97 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method of manufacturing a power module comprising two substrates is provided, wherein the method comprises disposing a compensation layer of a first thickness above a first substrate; disposing a second substrate above the compensation layer; and reducing the thickness of the compensation layer from the first thickness to a second thickness after the second substrate is disposed on the compensation layer.


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