The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Jul. 20, 2020
Micron Technology, Inc., Boise, ID (US);
Liu Liu, Dalian, CN;
David Daycock, Boise, ID (US);
Rithu K. Bhonsle, Boise, ID (US);
Giovanni Mazzone, Boise, ID (US);
Narula Bilik, Boise, ID (US);
Jordan D. Greenlee, Boise, ID (US);
Minsoo Lee, Boise, ID (US);
Benben Li, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Some embodiments include a method of forming stacked memory decks. A first deck has first memory cells arranged in first tiers disposed one atop another, and has a first channel-material pillar extending through the first tiers. An inter-deck structure is over the first deck. The inter-deck structure includes an insulative expanse, and a region extending through the insulative expanse and directly over the first channel-material pillar. The region includes an etch-stop structure. A second deck is formed over the inter-deck structure. The second deck has second memory cells arranged in second tiers disposed one atop another. An opening is formed to extend through the second tiers and to the etch-stop structure. The opening is subsequently extended through the etch-stop structure. A second channel-material pillar is formed within the opening and is coupled to the first channel-material pillar. Some embodiments include integrated assemblies.