The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Mar. 30, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Felix Deng, Singapore, SG;

Yueh Sheng Ow, Singapore, SG;

Tuck Foong Koh, Singapore, SG;

Nuno Yen-Chu Chen, Singapore, SG;

Yuichi Wada, Chiba, JP;

Sree Rangasai V. Kesapragada, Union City, CA (US);

Clinton Goh, Singapore, SG;

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/67017 (2013.01); H01L 21/67115 (2013.01); H01L 21/67253 (2013.01);
Abstract

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.


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