The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
May. 26, 2021
Vanguard International Semiconductor Corporation, Hsinchu, TW;
I-Ping Lee, Hsinchu, TW;
Kwang-Ming Lin, Taichung, TW;
Chih-Cherng Liao, Zhudong Township, TW;
Ya-Huei Kuo, Hsinchu, TW;
Pei-Yu Chang, Zhubei, TW;
Ya-Ting Chang, Hsinchu, TW;
Tsung-Hsiung Lee, Taoyuan, TW;
Zheng-Xian Wu, Taoyuan, TW;
Kai-Chuan Kan, Hsinchu, TW;
Yu-Jui Chang, Hsinchu, TW;
Yow-Shiuan Liu, Taipei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
Methods of forming semiconductor devices are provided. The methods include: forming a trench in a substrate, wherein the trench includes a defect protruding from a bottom surface of the trench; forming a flowable material on the substrate to at least partially cover the defect; performing an etching process to reduce the height of the defect; and removing the flowable material.