The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2023

Filed:

Aug. 24, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hidenori Yamaguchi, Higashihiroshima, JP;

Keizo Kawakita, Higashihiroshima, JP;

Wataru Hoshino, Kure, JP;

Shigeru Sugioka, Higashihiroshima, JP;

Toshiyuki Maenosono, Higashihiroshima, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/31144 (2013.01); H01L 27/10847 (2013.01);
Abstract

A method including forming an insulating film over first, second, third and fourth regions of a semiconductor substrate; forming a polyimide film on the insulating film; and patterning the polyimide film with a lithography method using a photomask including at least a first region of a first transmittance rate, a second region of a second transmittance rate, a third region having a shading material, and a fourth region, wherein the first, second, third and fourth regions of the photomask correspond to the first, second, third and fourth regions of the semiconductor substrate, respectively.


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