The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Jan. 19, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yi-Yun Li, Hsinchu, TW;

Tsai-Yu Huang, Taoyuan, TW;

Huicheng Chang, Tainan, TW;

Yee-Chia Yeo, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); H01L 21/02532 (2013.01); H01L 21/2254 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/1037 (2013.01); H01L 29/1083 (2013.01); H01L 29/161 (2013.01); H01L 29/7854 (2013.01);
Abstract

A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate and forming an isolation structure over the substrate. In addition, the fin structure is protruded from the isolation structure. The method further includes trimming the fin structure to a first width and forming a Ge-containing material covering the fin structure. The method further includes annealing the fin structure and the Ge-containing material to form a modified fin structure. The method also includes trimming the modified fin structure to a second width.


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