The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Dec. 28, 2020
Applicant:

Zing Semiconductor Corporation, Shanghai, CN;

Inventors:

Liying Liu, Shanghai, CN;

Gongbai Cao, Shanghai, CN;

Chihhsin Lin, Shanghai, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06T 7/77 (2017.01); H01L 21/67 (2006.01); H01L 21/68 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67259 (2013.01); H01L 21/68 (2013.01); H01L 22/20 (2013.01);
Abstract

The invention provides a method for positioning a wafer and a semiconductor manufacturing apparatus, which are applied to thin film processes. The method includes: Step S: Obtain the state distribution of the first surface of the first wafer after the thin film process is performed on the first wafer, wherein the first surface is the surface opposite to a surface that the thin film formed thereon in the thin film process; Step S: Determine whether the first wafer is located at the ideal positioning center according to the state distribution of the first surface, when the first wafer is not located at the ideal positioning center, according to the state distribution of the first surface adjusts the positioning position of the second wafer to be subjected to the thin film process, so that the second wafer is positioned at the ideal positioning center during the thin film process. According to the present invention, the wafer is positioned at the ideal positioning center during the thin film process, thereby improving the quality of the thin film layer and the entire wafer (epitaxial wafer) after the thin film process, and improving the effect of the thin film process.


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