The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2023

Filed:

Dec. 02, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shang-Chi Wu, Hsinchu, TW;

Yangsyu Lin, Hsinchu, TW;

Chiting Cheng, Hsinchu, TW;

Jonathan Tsung-Yung Chang, Hsinchu, TW;

Mahmut Sinangil, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 11/413 (2006.01); G11C 11/4094 (2006.01); G11C 11/412 (2006.01); G11C 11/4074 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 7/12 (2013.01); G11C 11/413 (2013.01); G11C 11/4074 (2013.01); G11C 11/4094 (2013.01); G11C 11/412 (2013.01); G11C 11/419 (2013.01);
Abstract

A memory circuit includes a reference node configured to carry a reference voltage having a reference voltage level, a power supply node configured to carry a power supply voltage having a power supply voltage level, a bit line coupled with a plurality of memory cells, a write circuit configured to charge the bit line by driving a voltage level on the bit line toward the power supply voltage level with a first current, and a switching circuit coupled between the power supply node and the bit line. The switching circuit is configured to receive the voltage level on the bit line, and responsive to a difference between the voltage level received on the bit line and the power supply voltage level being less than or equal to a threshold value, drive the voltage level on the bit line toward the power supply voltage level with a second current.


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