The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Feb. 08, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Ching Wang, Kinmen County, TW;
Chia-Ying Su, Hsinchu, TW;
Wen-Hsing Hsieh, Hsinchu, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Chung-Wei Wu, Hsin-Chu County, TW;
Zhiqiang Wu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
Embodiments of the present disclosure includes a method of forming a semiconductor device. The method includes providing a substrate having a plurality of first semiconductor layers and a plurality of second semiconductor layers disposed over the substrate. The method also includes patterning the first semiconductor layers and the second semiconductor layers to form a first fin and a second fin, removing the first semiconductor layers from the first and second fins such that a first portion of the patterned second semiconductor layers becomes first suspended nanostructures in the first fin and that a second portion of the patterned second semiconductor layers becomes second suspended nanostructures in the second fin, and doping a threshold modifying impurity into the first suspended nanostructures in the first fin.