The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Sep. 24, 2019
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Shohei Ogawa, Tokyo, JP;

Junji Fujino, Tokyo, JP;

Yusuke Ishiyama, Tokyo, JP;

Isao Oshima, Tokyo, JP;

Takumi Shigemoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 23/495 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/60 (2006.01);
U.S. Cl.
CPC ...
H01L 23/4952 (2013.01); H01L 21/50 (2013.01); H01L 23/49541 (2013.01); H01L 23/49816 (2013.01); H01L 24/14 (2013.01); H01L 2021/60097 (2013.01); H01L 2224/73265 (2013.01);
Abstract

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.


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