The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Jul. 02, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Alexander Roth, Zeitlarn, DE;

Olaf Hohlfeld, Warstein, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/24 (2006.01); H01L 23/053 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 21/54 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/24 (2013.01); H01L 21/56 (2013.01); H01L 23/053 (2013.01); H01L 23/295 (2013.01); H01L 21/54 (2013.01); H01L 23/562 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/8384 (2013.01); H01L 2224/83851 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/16151 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/1815 (2013.01);
Abstract

A method is disclosed for producing a power semiconductor module that includes a substrate, at least one semiconductor body, a connecting element and a contact element. The method includes: arranging the substrate in a housing having walls; at least partly filling a capacity formed by the walls of the housing and the substrate with an encapsulation material; hardening the encapsulation material to form a hard encapsulation; and closing the housing, wherein the contact element extends from the connecting element through an interior of the housing and through an opening in a cover of the housing to an outside of the housing in a direction perpendicular to a first surface of a first metallization layer of the substrate.


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