The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Aug. 12, 2020
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventors:
Tiantian Zhang, Shanghai, CN;
Jingjing Tan, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76844 (2013.01); H01L 21/76831 (2013.01); H01L 23/5226 (2013.01); H01L 21/28568 (2013.01); H01L 21/76879 (2013.01); H01L 23/53209 (2013.01); H01L 23/53266 (2013.01);
Abstract
Semiconductor device and fabrication method are provided. The method for forming the semiconductor device includes providing a substrate; forming a dielectric layer on the substrate; forming a through hole in the dielectric layer, the through hole exposing a portion of a top surface of the substrate; performing a surface treatment process on the dielectric layer of sidewalls of the through hole; and filling a metal layer in the through hole.