The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Nov. 25, 2020
Infineon Technologies Ag, Neubiberg, DE;
Werner Schustereder, Villach, AT;
Alexander Breymesser, Villach, AT;
Mihai Draghici, Villach, AT;
Tobias Franz Wolfgang Hoechbauer, Villach, AT;
Wolfgang Lehnert, Lintach, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Marko David Swoboda, Dresden, DE;
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Abstract
Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.