The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Jul. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Chen-Fang Chung, Zhubei, TW;

Wen-Cheng Cheng, Hsinchu, TW;

Po Wen Yang, Miaoli County, TW;

Ming-Jie He, Hsinchu County, TW;

Yan-Zi Lu, Hsinchu, TW;

Cheng-Yi Teng, Miaoli County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/34 (2006.01); C23C 14/34 (2006.01); C23C 14/54 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3435 (2013.01); C23C 14/3407 (2013.01); C23C 14/54 (2013.01); H01J 37/3405 (2013.01); H01J 37/3447 (2013.01);
Abstract

A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.


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