The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Jul. 11, 2020
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Caspar Leendertz, Munich, DE;

Romain Esteve, Prisdorf, DE;

Moriz Jelinek, Villach, AT;

Anton Mauder, Kolbermoor, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Werner Schustereder, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 21/04 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/047 (2013.01); H01L 29/0615 (2013.01); H01L 29/0634 (2013.01); H01L 29/0653 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/045 (2013.01); H01L 29/0619 (2013.01); H01L 29/7397 (2013.01); H01L 29/872 (2013.01);
Abstract

First dopants are implanted through a larger opening of a first process mask into a silicon carbide body, wherein the larger opening exposes a first surface section of the silicon carbide body. A trench is formed in the silicon carbide body in a second surface section exposed by a smaller opening in a second process mask. The second surface section is a sub-section of the first surface section. The larger opening and the smaller opening are formed self-aligned to each other. At least part of the implanted first dopants form at least one compensation layer portion extending parallel to a trench sidewall.


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