The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Oct. 23, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/02164 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/3247 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01);
Abstract
A method for manufacturing a semiconductor structure includes etching trenches in a semiconductor substrate to form a semiconductor fin between the trenches; converting sidewalls of the semiconductor fin into hydrogen-terminated surfaces each having silicon-to-hydrogen (S—H) bonds; after converting the sidewalls of the semiconductor fin into the hydrogen-terminated surfaces, depositing a dielectric material overfilling the trenches; and etching back the dielectric material to fall below a top surface of the semiconductor fin.