The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Aug. 21, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Shan Chen, Tainan, TW;
Chan-Syun David Yang, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate, a metal layer, an interlayer dielectric (ILD) layer. The metal layer is disposed over the semiconductor substrate. The ILD layer is over the semiconductor substrate and laterally surrounding the metal layer, in which the ILD layer has a first portion in contact with a first sidewall of the metal layer and a second portion in contact with a second sidewall of the metal layer opposite to the first sidewall of the metal layer, and a width of the first portion of the ILD layer decreases as a distance from the semiconductor substrate increases.