The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Jul. 22, 2020
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Inventors:

Bhaskar Bhuyan, Milpitas, CA (US);

Zeqing Shen, San Jose, CA (US);

Bo Qi, San Jose, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Xinke Wang, Singapore, SG;

Mark Saly, Milpitas, CA (US);

Assignees:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B05D 1/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02118 (2013.01); B05D 1/60 (2013.01); H01L 21/0228 (2013.01); H01L 21/02205 (2013.01); H01L 21/02318 (2013.01);
Abstract

Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.


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