The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
May. 03, 2021
Micron Technology, Inc., Boise, ID (US);
Karthik Sarpatwari, Boise, ID (US);
Nevil N. Gajera, Meridian, ID (US);
Jessica Chen, Boise, ID (US);
Lingming Yang, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for dynamic read voltage techniques are described. In some examples, a memory device may include one or more partitions made up of multiple disjoint subsets of memory arrays. The memory device may receive a read command to read the one or more partitions and enter a drift determination phase. During the drift determination phase, the memory device may concurrently apply a respective voltage of a set of voltages to each disjoint subset and determine a quantity of memory cells in each disjoint subset that have a threshold voltage below the applied voltage. Based on a comparison between the determined quantity of memory cells and a predetermined quantity of memory cells, the memory device may select a voltage from the set of voltages and utilize the selected voltage to read the one or more partitions.