The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Jul. 09, 2021
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/124 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01);
Abstract
A method for forming a resistive random access memory structure. The resistive random access memory structure includes a bottom electrode; a variable resistance layer disposed on the bottom electrode; a top electrode disposed on the variable resistance layer; a protection layer surrounding the variable resistance layer, wherein a top surface of the protection layer and a top surface of the top electrode are coplanar; and an upper interconnect structure disposed on the top electrode, wherein the upper interconnect structure is electrically connected to the top electrode and directly contacts a sidewall of the protection layer.