The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Apr. 07, 2021
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ta-Yuan Kung, New Taipei, TW;
Ruey-Hsin Liu, Hsinchu, TW;
Chen-Liang Chu, Hsin-Chu, TW;
Chih-Wen Yao, Hsinchu, TW;
Ming-Ta Lei, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having an upper boundary lower than an upper surface of the semiconductor substrate, and an upper surface flush with the upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric having a first section over the upper boundary of the gate dielectric and a second section over the upper surface of the gate dielectric. The second section partially covers and partially exposes the upper surface of the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.