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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11538772 B1

PDFFull Text
Date of Patent:
Dec. 27, 2022

Filed:

Nov. 19, 2020

Semiconductor device package and method of manufacturing the same

Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Cheng-Yu Ho, Kaohsiung, TW;

Meng-Wei Hsieh, Kaohsiung, TW;

Assignee:

ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Christina A Sylvia

Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/538 (2006.01); H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01Q 5/307 (2015.01); H01Q 1/48 (2006.01); H01L 23/31 (2006.01); H01Q 1/22 (2006.01); H01Q 21/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6831 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01Q 1/48 (2013.01); H01Q 5/307 (2015.01); H01L 2221/68372 (2013.01); H01L 2223/6677 (2013.01); H01Q 1/2283 (2013.01); H01Q 21/06 (2013.01);
Abstract

The present disclosure provides an antenna module. The antenna module includes a first layer, a second layer, a first antenna, and a second antenna. The first layer has a first dielectric constant. The second layer is adjacent to the first layer. The second layer has a second Dk lower than the first Dk. The first antenna is disposed on the first layer and is configured for operating at a first frequency. The second antenna is disposed on the second layer and is configured for operating at a second frequency higher than the first frequency.

Find Patent Forward Citations

Ho, Cheng-Yu. (2022). Semiconductor device package and method of manufacturing the same (U.S. Patent No. 11538772). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11538772

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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