The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Nov. 30, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Junji Fujino, Tokyo, JP;

Soichi Sakamoto, Tokyo, JP;

Katsumi Miyawaki, Tokyo, JP;

Hiroaki Ichinohe, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/075 (2006.01); H01L 25/04 (2014.01);
U.S. Cl.
CPC ...
H01L 23/367 (2013.01); H01L 21/4882 (2013.01); H01L 21/565 (2013.01); H01L 23/3128 (2013.01); H01L 24/16 (2013.01); H01L 25/042 (2013.01); H01L 25/0655 (2013.01); H01L 25/0753 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/26175 (2013.01);
Abstract

A semiconductor package includes: an insulating substrate; a first semiconductor chip; a second semiconductor chip with a thickness smaller than a thickness of the first semiconductor chip; a heat radiation member in which a main surface located on an opposite side of an active surface of the first semiconductor chip and an active surface of the second semiconductor chip, respectively, are bonded to a lower surface; and a sealing resin having contact with at least part of a side wall of the heat radiation member without being raised over an upper surface of the heat radiation member to seal the first and second semiconductor chips on the insulating substrate, wherein in the heat radiation member, a thickness of a first bonding part to which the first semiconductor chip is bonded is smaller than a thickness of a second bonding part to which the second semiconductor chip is bonded.


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