The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Feb. 09, 2021
Tokyo Electron Limited, Tokyo, JP;
Pingshan Luan, Albany, NY (US);
Aelan Mosden, Albany, NY (US);
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
In certain embodiments, a method for processing a semiconductor substrate includes receiving a semiconductor substrate that includes a film stack. The film stack includes a first silicon layer, a second silicon layer, and a first germanium-containing layer positioned between the first silicon layer and the second silicon layer. The method further includes selectively etching the first germanium-containing layer by exposing the film stack to a plasma that includes fluorine agents, nitrogen agents, and hydrogen agents. The plasma etches the first germanium-containing layer and causes a passivation layer to be formed on exposed surfaces of the first silicon layer and the second silicon layer to inhibit etching of the first silicon layer and the second silicon layer during exposure of the film stack to the plasma.