The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Jul. 15, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Xiamei Tang, Shanghai, CN;
Wei Shi, Shanghai, CN;
Tao Dou, Shanghai, CN;
Bo Su, Shanghai, CN;
Youcun Hu, Shanghai, CN;
Abstract
A method of forming a semiconductor structure includes providing a to-be-etched layer, forming a core layer over the to-be-etched layer, the core layer including a first trench extending along a first direction, forming a sidewall spacer layer on a top surface of the core layer and on sidewalls and a bottom surface of the first trench, forming a block cut structure in the first trench after forming the sidewall spacer layer, and after forming the block cut structure, etching back the sidewall spacer layer until exposing the top surface of the core layer, thereby leaving a sidewall spacer on the sidewalls of the first trench. The block cut structure extends through the first trench along a second direction. The second direction and the first direction are different. The block cut structure includes a first block-cut layer and a second block-cut layer.