The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Jun. 25, 2020
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Kwangmo Chris Lim, San Jose, CA (US);

Basim Noori, San Jose, CA (US);

Qianli Mu, San Jose, CA (US);

Marvin Marbell, Morgan Hill, CA (US);

Scott Sheppard, Chapel Hill, NC (US);

Alexander Komposch, Morgan Hill, CA (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/047 (2006.01); H03F 3/19 (2006.01); H01L 23/367 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2006.01); H03F 1/02 (2006.01); H03F 1/56 (2006.01);
U.S. Cl.
CPC ...
H03F 3/19 (2013.01); H01L 23/047 (2013.01); H01L 23/367 (2013.01); H01L 23/66 (2013.01); H01L 24/48 (2013.01); H01L 25/165 (2013.01); H03F 1/0288 (2013.01); H03F 1/56 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48175 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10346 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/13064 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/30111 (2013.01); H03F 2200/255 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01);
Abstract

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.


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