The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2022
Filed:
Feb. 25, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Meng-Han Lin, Hsinchu, TW;
Chia-En Huang, Hsinchu, TW;
Han-Jong Chia, Hsinchu, TW;
Martin Liu, Hsinchu, TW;
Sai-Hooi Yeong, Hsinchu, TW;
Yih Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A ferroelectric field-effect transistor (FeFET) configured as a multi-bit storage device, the FeFET including: a semiconductor substrate that has a source region in the semiconductor substrate, and a drain region in the semiconductor substrate; a gate stack over the semiconductor substrate, with the source region and the drain region extending to opposite sides of the gate stack, the gate stack including a ferroelectric layer over the semiconductor substrate, and a gate region over the ferroelectric layer. The transistor also includes first and second ends of the ferroelectric layer which are proximal correspondingly to the source and drain regions. The ferroelectric layer includes dipoles. A first set of dipoles at the first end of the ferroelectric layer has a first polarization. A second set of dipoles at the second end of the ferroelectric layer has a second polarization, the second polarization being substantially opposite of the first polarization.