The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2022

Filed:

Oct. 16, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi Jen Tsai, New Taipei, TW;

Yuan-Tai Tseng, Hsinchu County, TW;

Chern-Yow Hsu, Hsin-Chu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 49/02 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/32133 (2013.01); H01L 23/528 (2013.01); H01L 23/5223 (2013.01);
Abstract

A semiconductor structure includes a substrate, a first electrode over the substrate, a second electrode over the first electrode, and a first insulating layer between the first electrode and the second electrode. The first insulating layer has a first portion and a second portion coupled to the first portion, the second portion of the first insulating layer is in contact with the second electrode, the first portion is separated from the second electrode by the second portion. A thickness of the second portion is greater than a thickness of the first portion.


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