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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11532662 B1

PDFFull Text
Date of Patent:
Dec. 20, 2022

Filed:

Feb. 24, 2021

Method of forming image sensor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Yu Wei, Tainan, TW;

Yen-Liang Lin, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Hsun-Ying Huang, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Maschoff Brennan

Primary Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 31/0352 (2006.01); H01L 31/0336 (2006.01); H01L 31/028 (2006.01); H01L 31/0312 (2006.01); H01L 31/0304 (2006.01); H01L 31/0296 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14698 (2013.01); H01L 31/035272 (2013.01); H01L 31/103 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14689 (2013.01); H01L 31/028 (2013.01); H01L 31/0296 (2013.01); H01L 31/0304 (2013.01); H01L 31/0312 (2013.01); H01L 31/0336 (2013.01);
Abstract

A method includes providing a semiconductor substrate having a front side surface and a back side surface opposite to the front side surface. A photosensitive region of the semiconductor substrate is etched to form a recess. A semiconductor material is deposited on the semiconductor substrate to form a radiation sensing member filling the recess. The semiconductor material has an optical band gap energy smaller than 1.77 eV. A device layer is formed over the front side surface of the semiconductor substrate and the radiation sensing member. A trench isolation is formed in an isolation region of the semiconductor substrate and extending from the back side surface of the semiconductor substrate.

Find Patent Forward Citations

Wei, Chia-Yu. (2022). Method of forming image sensor device (U.S. Patent No. 11532662). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11532662

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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