IDiyas

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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11532504 B1

PDFFull Text
Date of Patent:
Dec. 20, 2022

Filed:

Aug. 05, 2020

Low-resistance contact plugs and method forming same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Shao-Ming Koh, Hsinchu, TW;

Chen-Ming Lee, Yangmei, TW;

Fu-Kai Yang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Timor Karimy

Int. Cl.
CPC ...
H01L 29/165 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76805 (2013.01); H01L 21/0332 (2013.01); H01L 21/283 (2013.01); H01L 21/76837 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 21/28518 (2013.01); H01L 21/76834 (2013.01); H01L 21/823425 (2013.01); H01L 29/165 (2013.01); H01L 29/665 (2013.01); H01L 29/7848 (2013.01);
Abstract

A method includes forming a first and a second contact opening to reveal a first and a second source/drain region, respectively, forming a mask layer having a first and a second portion in the first and the second contact openings, respectively, forming a first and a second sacrificial ILD in the first and the second contact openings, respectively, removing the first sacrificial ILD from the first contact opening, filling a filler in the first contact opening, and etching the second sacrificial ILD. The filler protects the first portion of the mask layer from being etched. An ILD is formed in the second contact opening and on the second portion of the mask layer. The filler and the first portion of the mask layer are removed using a wet etch to reveal the first contact opening. A contact plug is formed in the first contact opening.

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