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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11532339 B1

PDFFull Text
Date of Patent:
Dec. 20, 2022

Filed:

Jun. 15, 2020

Method for forming semiconductor memory structure

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Jui-Fen Chien, Taichung, TW;

Hanwen Yeh, Hsinchu, TW;

Tsann Lin, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT Law

Anthony King

Primary Examiner:

Shih Tsun A Chou

Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 27/226 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01);
Abstract

A method for forming a semiconductor memory structure is provided. The method includes following operations. An interlayer is formed over a first ferromagnetic layer, wherein forming the interlayer includes following operations. A first metal film is formed by sputtering a first target material. A first oxygen treatment is conducted to the first metal film to form a first metal oxide film. A second metal oxide film is formed over the first metal oxide film by sputtering a second target material different from the first target material. A second metal film is formed by sputtering a third target material. A second oxygen treatment is conducted to the second metal film to form a third metal oxide film.

Find Patent Forward Citations

Chien, Jui-Fen. (2022). Method for forming semiconductor memory structure (U.S. Patent No. 11532339). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11532339

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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