The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Dec. 31, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Meng-Sheng Chang, Chu-bei, TW;
Chia-En Huang, Xinfeng Township, TW;
Assignee:
TAIWAN SEMICONDUCTOH MANUFACTUHING COMPANY LIMITED, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/112 (2006.01); H01L 23/525 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11206 (2013.01); G11C 17/165 (2013.01); H01L 23/5252 (2013.01); G11C 2213/79 (2013.01);
Abstract
A memory device includes an anti-fuse cell array having a plurality of anti-fuse cells, each of the plurality of anti-fuse cells having a first transistor and a second transistor connected to the first transistor. A first terminal of the first transistor is connected to a bit line and the bit line is a buried rail formed in a substrate of the first transistor and the second transistor.