The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Dec. 01, 2020
Applicant:

United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;

Inventors:

Xiongwu He, Fujian, CN;

Weiguo Xu, Fujian, CN;

Yuan-Chi Pai, Fujian, CN;

Wen Yi Tan, Fujian, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); G03F 1/42 (2012.01); G03F 1/86 (2012.01); G03F 7/20 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); G03F 1/42 (2013.01); G03F 1/86 (2013.01); G03F 7/2022 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 22/12 (2013.01);
Abstract

A manufacturing method of a contact structure includes the following steps. A substrate is provided, and the substrate includes a first region and a second region. A dielectric layer is formed on the substrate. A photoresist layer is formed on the dielectric layer. An exposure process is performed. The exposure process includes first exposure steps and second exposure steps. Each of the first exposure steps is performed to a part of the first region of the substrate. Each of the second exposure steps is performed to a part of the second region of the substrate. Each of the second exposure steps is performed with a first overlay shift by a first predetermined distance. A develop process is performed for forming openings in the photoresist layer.


Find Patent Forward Citations

Loading…