The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Jun. 08, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Shuliang Ning, Hefei, CN;

Jun He, Hefei, CN;

Zhan Ying, Hefei, CN;

Jie Liu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/14 (2006.01); G11C 29/42 (2006.01); G11C 29/18 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G11C 29/14 (2013.01); G11C 29/18 (2013.01); G11C 2029/1802 (2013.01);
Abstract

The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; storing the address information pointed to by the read command into a memory bit of a preset memory space if an error occurs in the data to be read out, wherein the preset memory space is provided with a plurality of the memory bits, each of the plurality of memory bits being associated with a spare memory cell; and backing up the address information stored in the preset memory space into a non-volatile memory cell according to a preset rule.


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