The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2022
Filed:
Jan. 04, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 11/06 (2006.01); G03F 7/20 (2006.01); G01N 21/84 (2006.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01B 11/06 (2013.01); G01B 11/0616 (2013.01); G01N 21/8422 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); G03F 7/2043 (2013.01); G03F 7/70633 (2013.01); H01L 22/12 (2013.01);
Abstract
A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.