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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11522049 B1

PDFFull Text
Date of Patent:
Dec. 06, 2022

Filed:

Oct. 07, 2020

Diffusion barrier layer for source and drain structures to increase transistor performance

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kuei-Ming Chen, New Taipei, TW;

Chi-Ming Chen, Zhubei, TW;

Chung-Yi Yu, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Sonya McCall-Shepard

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 29/165 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/84 (2013.01); H01L 27/0886 (2013.01); H01L 27/1203 (2013.01); H01L 29/167 (2013.01); H01L 29/66568 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02639 (2013.01);
Abstract

Various embodiments of the present disclosure are directed towards a semiconductor device including a gate electrode over a semiconductor substrate. An epitaxial source/drain layer is disposed on the semiconductor substrate and is laterally adjacent to the gate electrode. The epitaxial source/drain layer comprises a first dopant. A diffusion barrier layer is between the epitaxial source/drain layer and the semiconductor substrate. The diffusion barrier layer comprises a barrier dopant that is different from the first dopant.

Find Patent Forward Citations

Chen, Kuei-Ming. (2022). Diffusion barrier layer for source and drain structures to increase transistor performance (U.S. Patent No. 11522049). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11522049

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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